bms3003 no. a1907-1/7 features ? on-resistance r ds (on)1=5.0m (typ.) ? input capacitance ciss=13200pf (typ.) ? 4v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss --60 v gate-to-source voltage v gss 20 v drain current (dc) i d --78 a drain current (pulse) i dp pw 10 s, duty cycle 1% --312 a allowable power dissipation p d 2.0 w tc=25 c40w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *1 e as 420 mj avalanche current *2 i av --60 a note : * 1 v dd =--36v, l=100 h, i av =--60a (fig.1) * 2 l 100 h, single pulse package dimensions unit : mm (typ.) 7529-001 91212 tkim tc-00002812/d2210qa tkim tc-00002546 bms3003 p-channel silicon mosfet general-purpose switching device applications http://www.sanyosemi.com/en/network/ ordering number : ena1907a 1 3 2 product & package information ? package : to-220f-3sg ? jeita, jedec : sc-67 ? minimum packing quantity : 50 pcs./magazine marking electrical connection 1 : gate 2 : drain 3 : source sanyo : to-220f-3sg 10.16 0.8 15.87 12.98 3.3 6.68 3.23 1.47 max 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 ( 1.0) (0.84) detail-a a emc frame bms3003-1e ms3003 lot no. sanyo semiconductors data sheet
bms3003 no. a1907-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min. typ. max. drain-to-source breakdown voltage v (br)dss i d = -- 1ma, v gs =0v --60 v zero-gate voltage drain current i dss v ds = --60 v, v gs =0v --10 a gate-to-source leakage current i gss v gs =16v, v ds =0v 10 a cutoff voltage v gs (off) v ds = -- 10v, i d = -- 1ma --1.2 --2.6 v forward transfer admittance | yfs | v ds = -- 10v, i d = --39 a 130 s static drain-to-source on-state resistance r ds (on)1 i d = --39 a, v gs = -- 10v 5.0 6.5 m r ds (on)2 i d = --39 a, v gs = -- 4v 6.5 9.0 m input capacitance ciss v ds =--20v, f=1mhz 13200 pf output capacitance coss 1300 pf reverse transfer capacitance crss 950 pf turn-on delay time t d (on) see fig.2 90 ns rise time t r 360 ns turn-off delay time t d (off) 1200 ns fall time t f 680 ns total gate charge qg v ds =--36v, v gs =--10v, i d =--78a 285 nc gate-to-source charge qgs 35 nc gate-to-drain ?miller? charge qgd 70 nc diode forward voltage v sd i s =--78a, v gs =0v --0.95 --1.5 v reverse recovery time t rr see fig.3 i s =--78a, v gs =0v, di/dt=--100a/ s 150 ns reverse recovery charge q rr 470 nc fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit fig.3 reverse recovery time test circuit ordering information device package shipping memo bms3003-1e to-220f-3sg 50pcs./magazine pb free 50 0v --10v 50 rg v dd l bms3003 g s d pw=10 s d.c. 1% p. g 50 g s d i d = --39a r l =0.92 v dd = --36v v ou t v in 0v --10v v in bms3003 v dd bms3003 l driver mosfet g s d
bms3003 no. a1907-3/7 drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a static drain-to-source on-state resistance, r ds (on) -- m case temperature, tc -- c static drain-to-source on-state resistance, r ds (on) -- m drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a gate-to-source voltage, v gs -- v i d -- v ds i d -- v gs r ds (on) -- tc r ds (on) -- v gs i s -- v sd | y fs | -- i d forward transfer admittance, | y fs | -- s drain current, i d -- a switching time, sw time -- ns sw time -- i d drain-to-source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it16242 it16239 --50 --25 150 0 --30 --10 --15 --20 --25 -- 5 100 1000 3 2 it16246 it16244 it16243 --0.1 --1.0 23 57 3 100 1000 --1.4 --1.2 --1.0 --0.8 --0.4 --0.2 --0.6 0 --0.01 --0.1 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 --1.0 --10 --100 --1000 7 5 7 5 3 2 3 10 1.0 7 5 2 2 10000 100000 2 2 --10 357 --100 57 23 --0.1 --1.0 23 57 2 --10 357 --100 57 23 0 25 50 75 100 125 3 5 7 3 2 5 7 5 7 75 c 25 c tc= --25 c --25 c tc=75 c i d = --39a single pulse single pulse tc=75 c 25 c --25 c tc= --25 c 25 c 75 c v ds = --10v tc=75 c 25 c --25 c ciss crss it16245 10 100 3 2 3 2 5 5 7 1000 10000 2 3 5 7 7 t d (off) v dd = --36v v gs = --10v t r --0.2 --0.6 --0.4 --0.8 --1.0 --1.2 --1.4 0 0 --20 --40 --160 --140 --120 --100 --80 --60 0 --20 --40 --160 --140 --120 --100 --80 --60 0 it16241 -- 3 0 --1 --2 --4 --5 --6 --7 --10 -- 8 -- 9 0 2 16 14 12 8 10 4 6 4 2 0 8 6 16 14 12 10 it16240 --0.5 --1.5 --2.0 --1.0 --2.5 --4.0 --4.5 --5.0 --3.5 --3.0 0 tc=25 c --4v v gs = --3v --10v v ds = --10v t f 25 c v gs = --4v, i d = --39a v gs = --10v, i d = - -39a --8v coss t d (on) --6v f=1mhz v gs =0v single pulse
bms3003 no. a1907-4/7 total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg e as -- ta avalanche energy derating factor -- % ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w p d -- tc a s o drain-to-source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c case temperature, tc -- c allowable power dissipation, p d -- w it16248 0 50 200 150 250 100 300 0 -- 2 -- 4 -- 6 -- 1 -- 3 -- 5 -- 8 -- 7 -- 9 --10 it16250 0 0 20 40 60 80 100 120 140 100 80 60 20 40 120 160 it16251 --0.1 --1.0 2 3 5 7 2 3 5 7 2 7 3 5 2 3 5 7 --10 --0.1 i dp = --312a (pw 10 s) i d = --78a 100 s 1ms 10ms 100ms dc operation operation in this area is limited by r ds (on). --1.0 23 57 2 --10 --100 357 2357 10 s --100 --1000 0 0 20 40 60 80 100 140 120 30 35 40 25 15 10 20 5 45 160 v ds = --36v i d = --78a it16249 it16247 0 0 20 40 60 80 100 140 120 2.5 2.0 1.0 0.5 1.5 160 tc=25 c single pulse
bms3003 no. a1907-5/7 magazine speci cation bms3003-1e
bms3003 no. a1907-6/7 outline drawing bms3003-1e mass (g) unit 1.8 * for reference mm
bms3003 no. a1907-7/7 ps this catalog provides information as of september, 2012. speci cations and information herein are subject to change without notice. note on usage : since the bms3003 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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